Ge Wafer (110) N-type Undoped, 1" dia x 0.5 mm , 2SP,R:>50 ohm.cm Two Dimensional Crystal

Ge Wafer (110) N-type Undoped, 1" dia x 0.5 mm , 2SP,R:>50 ohm.cm Two Dimensional CrystalGe Wafer Specification Growing Method: CZ Orientation: (110) + _0. 5 Deg. Wafer Size: 1" dia x 500 microns Surface Polishing: two sides polished Surface roughness: Ra < 10 A ( by AFM) Doping: Undoped Conductor type: N type Resistivity: >50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties: Structure: Cubic, a = 5.

because all pressing dies are made by high-stretched carbon steel for achieving high hardness to meet essential requirements of making ceramic or metal samples

Optional You may order a pre-formed pouch cell case and other accessories  by click the picture below right

NRTL and CSA certified

Molded of tough polycarbonate plastic

079 (50 +/- 4 mm)

Materials Case and cap are made of  Nickel plated A3 steel

diamond head

Distance between Pore: 0

The CMC with two viscosity is available: [High:3500-5500 mPa·s] and [Low:1900-2200 mPa·s]

Various types of samples can be placed in a plurality of vacuum storage tanks and placed directly in the glove box (pic 3 and pic 4)

Negative case (the top part with insulating O-ring

38A    c=30